K3KL7L70EM-MGCU vs K3KLALA0DM-MGCU Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K3KL7L70EM-MGCU sa pamamagitan ng Samsung Electronics at K3KLALA0DM-MGCU sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung
K3KL7L70EM-MGCU ✓ NakahandaSamsung Electronics
K3KLALA0DM-MGCU - 16Gb LPDDR5X DRAM 6400Mbps | Samsung
K3KLALA0DM-MGCU ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K3KL7L70EM-MGCU | K3KLALA0DM-MGCU |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Samsung Electronics | — |
| Uri ng Memory | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 12 Gbit (1.5 GB) | 16 Gbit (2 GB) per die |
| Packhaging | 315-ball FBGA | 315-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Speed Grade Suffix | -MGCU | MGCU (6400 Mbps class) |
| Rate ng Data | [DATA_NEEDED: data rate Mbps/pin] | — |
| Supply Voltage VDD | [DATA_NEEDED: VDD core voltage] | — |
| Supply Voltage VDDQ | [DATA_NEEDED: VDDQ I/O voltage] | — |
| Organisasyon | [DATA_NEEDED: organization x32] | [DATA_NEEDED: die organization x16/x32] |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Bank Architecture | [DATA_NEEDED: bank group count] | — |
| Latensya ng CAS | [DATA_NEEDED: CAS latency] | — |
| Refresh | Self-refresh and per-bank refresh per JEDEC LPDDR5X | — |
| Termination | On-Die Termination (ODT) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Maximum Data Rate | — | 6400 Mbps per pin |
| Interface | — | LPDDR5X (LPDDR5X-class channel) |
| Supply Voltage - Core (VDD1) | — | [DATA_NEEDED: VDD1 voltage] |
| Supply Voltage - I/O (VDD2/VDDQ) | — | [DATA_NEEDED: VDDQ voltage] |
| Grade | — | Mobile / Low Power Mobile Grade |
| Ball Pitch | — | [DATA_NEEDED: ball pitch mm] |
| Place of Origin | — | Johor, Malaysia (per distributor listing) |
| DRAM Process | — | Advanced DRAM node (EUV-class per Samsung LPDDR5X family) |