K3KL7L70EM-MGCU vs K3KLALA0DM-MGCU 比較
詳細並排比較 K3KL7L70EM-MGCU 由 Samsung Electronics 與 K3KLALA0DM-MGCU 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung
K3KL7L70EM-MGCU ✓ 啟用中規格比較
| 參數 | K3KL7L70EM-MGCU | K3KLALA0DM-MGCU |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Samsung Electronics | — |
| 記憶體類型 | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 12 Gbit (1.5 GB) | 16 Gbit (2 GB) per die |
| 封裝 | 315-ball FBGA | 315-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Speed Grade Suffix | -MGCU | MGCU (6400 Mbps class) |
| 資料速率 | [DATA_NEEDED: data rate Mbps/pin] | — |
| Supply Voltage VDD | [DATA_NEEDED: VDD core voltage] | — |
| Supply Voltage VDDQ | [DATA_NEEDED: VDDQ I/O voltage] | — |
| 組織 | [DATA_NEEDED: organization x32] | [DATA_NEEDED: die organization x16/x32] |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Bank Architecture | [DATA_NEEDED: bank group count] | — |
| CAS 延遲 | [DATA_NEEDED: CAS latency] | — |
| Refresh | Self-refresh and per-bank refresh per JEDEC LPDDR5X | — |
| Termination | On-Die Termination (ODT) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Maximum Data Rate | — | 6400 Mbps per pin |
| 介面 | — | LPDDR5X (LPDDR5X-class channel) |
| Supply Voltage - Core (VDD1) | — | [DATA_NEEDED: VDD1 voltage] |
| Supply Voltage - I/O (VDD2/VDDQ) | — | [DATA_NEEDED: VDDQ voltage] |
| Grade | — | Mobile / Low Power Mobile Grade |
| Ball Pitch | — | [DATA_NEEDED: ball pitch mm] |
| Place of Origin | — | Johor, Malaysia (per distributor listing) |
| DRAM Process | — | Advanced DRAM node (EUV-class per Samsung LPDDR5X family) |