K3LK4L40DM-BGCT vs K3KL3L30CM-BGCU Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K3LK4L40DM-BGCT sa pamamagitan ng Samsung Electronics at K3KL3L30CM-BGCU sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ NakahandaSamsung Electronics
K3KL3L30CM-BGCU - 64Gb LPDDR5X DRAM 8533Mbps | Samsung
K3KL3L30CM-BGCU ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K3LK4L40DM-BGCT | K3KL3L30CM-BGCU |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DRAM (SDRAM component) | LPDDR5X SDRAM (Volatile DRAM) |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | — |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Rate ng Data | [DATA_NEEDED: Data Rate] | 8533 Mbps |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | [DATA_NEEDED: VDD/VDDQ voltage] |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| Level ng MSL | [DATA_NEEDED: Moisture Sensitivity Level] | [DATA_NEEDED: moisture sensitivity level] |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Laki ng Memory | — | 64 Gb (8 GB) |
| Memory Organization | — | x64 |
| Technology | — | LPDDR5X (JEDEC LPDDR5X-class low-power DRAM) |
| Packhaging | — | FBGA-496 (BGCU) |
| Die Configuration | — | Stacked multi-die DRAM |
| Interface | — | LPDDR5X (standard LPDDR ball interface) |
| Application Segment | — | AI devices and automotive |
| Power Efficiency | — | Approx. 25% better than previous LPDDR5 generation (per Samsung) |
| Speed Improvement | — | Up to 1.25x faster than previous generation (per Samsung) |
| Place of Origin (per distributor listing) | — | Johor, Malaysia |