K3LK8K80CM-MFCP vs K3K8K80BM-MGCP Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K3LK8K80CM-MFCP sa pamamagitan ng Samsung Electronics at K3K8K80BM-MGCP sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung
K3LK8K80CM-MFCP ✓ NakahandaSamsung Electronics
K3LKCKC0BM-MGCP - 64Gb LPDDR5 DRAM 6400Mbps | Samsung
K3K8K80BM-MGCP ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K3LK8K80CM-MFCP | K3K8K80BM-MGCP |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | LPDDR5 SDRAM | LPDDR5 SDRAM (DRAM) |
| Density | 48 Gbit (6 GB) | 64 Gb |
| Organisasyon | [DATA_NEEDED: organization (x width)] | 2G x 32 |
| Pin Speed | 6400 Mbps | — |
| Data Rate (package) | 51.2 GB/s (family max) | — |
| Interface | LPDDR5 (JESD209-5 class low-power DRAM interface) | LPDDR5 (CMOS) |
| Packhaging | 315-ball FBGA (MFCP) | FBGA-315 (PBGA315) |
| Ball Count | 315 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -40 C to +105 C (automotive-grade) | -25C to +85C |
| Volte ng Pagbibigay | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| Power Saving vs LPDDR4X | Approximately 20% | — |
| Generation | LPDDR5 (5th generation low-power DRAM) | — |
| Application Grade | Automotive-grade storage chip | — |
| Place of Origin | Johor, Malaysia | — |
| Tindminan RoHS | unknown | Compliant |
| Rate ng Data | — | 6400 Mbps |
| Supply Voltages | — | 500 mV, 900 mV, 1.05 V, 1.8 V |
| Technology | — | CMOS |
| Memory Category | — | Volatile DRAM |
| Lead Free | — | Yes |
| Application Class | — | Specialized ICs / Memory |
| I/O Width | — | 32-bit |