K4A8G085WB-BIWE vs MT40A1G8SA-075:E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WB-BIWE sa pamamagitan ng Samsung Electronics at MT40A1G8SA-075:E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4A8G085WB-BIWE | MT40A1G8SA-075:E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | SDRAM - DDR4 |
| Laki ng Memory | 8 Gb | 8Gbit (1G x 8) |
| Memory Organization | 1G x 8 | — |
| Rate ng Data | 3200 Mbps | 2666 MT/s |
| Volte ng Pagbibigay | 1.2 V | — |
| Temperature na Operasyon | 0°C to +85°C | — |
| Packhaging | 78-FBGA | 78-FBGA (7.5x11 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | — |
| Latensya ng CAS | [DATA_NEEDED: CL value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Interface | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| Hanay ng Temperature na Operasyon | — | 0°C to +95°C |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Write Leveling | — | Supported |
| Dynamic On-Chip Termination | — | Supported |
| CRC Function | — | Supported |
| Data Mask Function | — | Supported |