K4A8G085WC-BCTD vs K4A8G085WC-BIWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WC-BCTD sa pamamagitan ng Samsung Electronics at K4A8G085WC-BIWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Huling PagbiliPagsanggunian na paghahambing
| Parametro | K4A8G085WC-BCTD | K4A8G085WC-BIWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Huling Pagbili | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasyon | 1G x 8 | 1G x 8 |
| Rate ng Data | 2666 Mbps (PC4-2133) | 3200 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2 V (1.14 V to 1.26 V) | — |
| Packhaging | 78-ball FBGA (78FBGA) | 78-FBGA |
| Ball Pitch | 0.8 mm | — |
| Temperature na Operasyon | 0C to +95C | — |
| Standard Operating Temp Range | 0C to +85C | — |
| Burst Length | 8 (chop 4) | 8 (BL8), 4 (BC4) |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Uri ng Interface | Synchronous, parallel | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Hanay ng Temperature na Operasyon | — | -40°C to +95°C |
| Interface | — | POD-12 |
| Latensya ng CAS | — | 22 (CL22) |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |