K4RAH165VB-BCWM vs K4RAH165VB-BCQK Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4RAH165VB-BCWM sa pamamagitan ng Samsung Electronics at K4RAH165VB-BCQK sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4RAH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung
K4RAH165VB-BCWM ✓ NakahandaSamsung Electronics
K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung
K4RAH165VB-BCQK ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4RAH165VB-BCWM | K4RAH165VB-BCQK |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR5 SDRAM (volatile DRAM) | DDR5 SDRAM |
| Laki ng Memory | 16 Gb | 16 Gb |
| Memory Organization | 1G x 16 | 1G x 16 |
| Memory Interface | Parallel | Parallel |
| Volte ng Pagbibigay | 1.1 V | — |
| Technology | DDR5 | — |
| Packhaging | FBGA-106 | 106-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +85C | 0C to +85C |
| Maximum Data Rate (DDR5 family) | up to 7200 Mbps | — |
| On-die ECC | Yes | — |
| Auto Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Speed Grade (suffix BCWM) | [DATA_NEEDED: speed grade / CAS latency] | — |
| Packaging | Tray | Tray |
| Rate ng Data | — | 4800 Mbps |
| Supply Voltage (VDD) | — | 1.1 V |
| Error Correction | — | On-die ECC |
| Mga Karakteristika | — | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration |
| Memory Format | — | DRAM (volatile) |
| Katayuan ng Lifecycle | — | Active |
| Unit Price | — | [DATA_NEEDED: unit price] |