K4RAH165VB-BCWM vs K4RBH165VB-BCWM Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4RAH165VB-BCWM sa pamamagitan ng Samsung Electronics at K4RBH165VB-BCWM sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4RAH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung
K4RAH165VB-BCWM ✓ NakahandaSamsung Electronics
K4RBH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung
K4RBH165VB-BCWM ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4RAH165VB-BCWM | K4RBH165VB-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR5 SDRAM (volatile DRAM) | DDR5 SDRAM |
| Laki ng Memory | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| Memory Interface | Parallel | — |
| Volte ng Pagbibigay | 1.1 V | — |
| Technology | DDR5 | — |
| Packhaging | FBGA-106 | FBGA-106 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +85C | 0C to +85C |
| Maximum Data Rate (DDR5 family) | up to 7200 Mbps | — |
| On-die ECC | Yes | — |
| Auto Self-Refresh | Yes | Yes |
| Asynchronous Reset | Yes | Yes |
| Write Leveling | Yes | Yes |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Speed Grade (suffix BCWM) | [DATA_NEEDED: speed grade / CAS latency] | — |
| Packaging | Tray | — |
| Density | — | 16 Gbit |
| Organisasyon | — | 1G x 16 |
| Supply Voltage (VDD) | — | 1.1 V |
| Data Rate Class | — | DDR5 5600 Mbps (family per Octopart listing of sibling part) |
| On-Die ECC | — | Yes |
| Write CRC | — | Yes |
| Operating Mode | — | DLL Enabled |
| Lead Free | — | Yes |
| Level ng MSL | — | [DATA_NEEDED: MSL Level] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |