K4RHE165VB-BCWM vs K4RBH165VB-BCWM Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4RHE165VB-BCWM sa pamamagitan ng Samsung Electronics at K4RBH165VB-BCWM sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4RBH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung
K4RBH165VB-BCWM ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4RHE165VB-BCWM | K4RBH165VB-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR5 SDRAM | DDR5 SDRAM |
| Density | 24 Gb | 16 Gbit |
| Organisasyon | 1G x 16 | 1G x 16 |
| Rate ng Data | 5600 Mbps | — |
| Volte ng Pagbibigay | 1.1 V | — |
| Packhaging | 106 FBGA | FBGA-106 |
| Temperature na Operasyon | 0 C to +85 C | 0C to +85C |
| Product Status | Mass Production | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | Parallel, DDR5 | — |
| Generation | DDR5 | — |
| Application Segment | DDR5 memory modules and HPC systems | — |
| Speed Grade Suffix | BCWM | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| tCK (Clock Period) | [DATA_NEEDED: clock period] | — |
| Latensya ng CAS | [DATA_NEEDED: CAS latency] | — |
| Supply Voltage (VDD) | — | 1.1 V |
| Data Rate Class | — | DDR5 5600 Mbps (family per Octopart listing of sibling part) |
| On-Die ECC | — | Yes |
| Write CRC | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Operating Mode | — | DLL Enabled |
| Lead Free | — | Yes |
| Level ng MSL | — | [DATA_NEEDED: MSL Level] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |