LTC2145CUP-12 vs LTC2216IUP Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng LTC2145CUP-12 sa pamamagitan ng Analog Devices at LTC2216IUP sa pamamagitan ng Analog Devices. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Analog Devices
LTC2145CUP-12 - 12-Bit 125Msps Dual ADC, 1.8V, 64-QFN | Analog Devices
LTC2145CUP-12 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | LTC2145CUP-12 | LTC2216IUP |
|---|---|---|
| Brand | Analog Devices | Analog Devices |
| Kategorya | ADC/DAC | ADC/DAC |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Pangangasiwaan | 12 bits | 16 bits |
| Sample Rate | 125 Msps | — |
| Number of Channels | 2 (simultaneous sampling) | 1 |
| Architecture | Pipelined with on-chip S/H | Pipelined |
| Analog Supply Voltage | 1.8 V (single supply) | — |
| Digital I/O Supply | 1.2 V to 1.8 V (separate supply) | — |
| Analog Input Type | Differential | — |
| INL (typical) | ±0.3 LSB | — |
| DNL (typical) | ±0.1 LSB (no missing codes over temperature) | — |
| Transition Noise | 0.3 LSB RMS | — |
| SNR | 70.6 dB | — |
| SFDR | 89 dB | — |
| Aperture Jitter | 0.08 ps RMS | 85 fsRMS |
| Output Modes | Full-rate CMOS, DDR CMOS, DDR LVDS (selectable) | — |
| Hanay ng Temperature na Operasyon | 0 °C to +70 °C (C grade) | -40°C to +85°C (industrial, I suffix) |
| Packhaging | 64-QFN EP (9 mm x 9 mm, exposed pad) | 64-pin QFN (UP) 9x9 mm with EP |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant (#PBF suffix indicates lead-free RoHS) | Compliant (#PBF suffix) |
| Sampling Rate (max) | — | 80 Msps |
| Input Range | — | 2.75 Vp-p differential (fixed) |
| Input Frequency (max, specified) | — | 400 MHz |
| SNR at 30 MHz input | — | 81 dB |
| SFDR at 30 MHz input | — | 96 dB |
| INL (max) | — | ±3.5 LSB |
| DNL (max) | — | ±1 LSB (no missing codes) |
| Analog Supply (AVDD) | — | 3.3 V |
| Digital Supply (OVDD) | — | 1.8 V |
| Power Consumption (80 Msps) | — | 760 mW (typical) |
| Output Interface | — | CMOS or LVDS-compatible DDR |
| Internal Dither | — | Optional (improved SFDR) |