M29W320DB70N3E vs M29W400FT55N3E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29W320DB70N3E sa pamamagitan ng Micron Technology at M29W400FT55N3E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron
M29W320DB70N3E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29W320DB70N3E | M29W400FT55N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Flash | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | NOR Flash | Flash - NOR Memory IC |
| Density | 32 Mbit (33554 kbits) | — |
| Organisasyon | 2M x 16 | — |
| Number of Words | 2000 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 70 ns | 55 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V (program, erase and read) |
| VPP Fast Program Voltage | 12 V (optional) | — |
| Interface | Parallel | Parallel |
| Block Architecture | Non-uniform parameter blocks, boot block (bottom boot, DB type) | — |
| Temperature na Operasyon | -40C to +125C | -40C to +125C |
| Packhaging | 48-TSOP I | 48-TSOP I |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | ROHS3 Compliant | — |
| Programming Mode | Single VCC program/erase; automatic program/erase with status polling | — |
| Power-Up Mode | Read mode (default) | — |
| Laki ng Memory | — | 4 Mbit |
| Sector Size | — | 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block) |
| Boot Block Position | — | Top (FT suffix) |
| Temperature Grade | — | Automotive |
| Number of Terminals | — | 48 |
| Package Code / Shape | — | TSSOP / Rectangular |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | — | 3 (168 Hours) |
| Packaging | — | Tray |
| Peak Reflow Time | — | 30 s max |
| Companion Access-Time Grade | — | 55 ns and 70 ns versions available in family |