M321R4GA0PB2-CCP vs M321R4GA3EB2-CWM Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng M321R4GA0PB2-CCP sa pamamagitan ng Samsung Electro-Mechanics at M321R4GA3EB2-CWM sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electro-Mechanics
M321R4GA0PB2-CCP M321R4GA0PB2-CCP - 32GB DDR5-6400 ECC RDIMM | Samsung

M321R4GA0PB2-CCP - 32GB DDR5-6400 ECC RDIMM | Samsung

M321R4GA0PB2-CCP ✓ Nakahanda
Samsung Electronics
M321R4GA3EB2-CWM M321R4GA3EB2-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung

M321R4GA3EB2-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung

M321R4GA3EB2-CWM ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro M321R4GA0PB2-CCP M321R4GA3EB2-CWM
Brand Samsung Electro-Mechanics Samsung Electronics
Kategorya Memory ICs EEPROM
Katayuan ng Lifecycle Aktibo Aktibo
Katayuan ng Stock — In Stock
Presyo ng Yunit (USD) — $1,260.00
Capacity 32 GB (1 x 32 GB) —
Uri ng Memory DDR5 SDRAM DDR5 SDRAM ECC Registered (RDIMM)
Module Type 288-pin RDIMM (ECC Registered) —
Speed 6400 MT/s (PC5-51200) —
Latensya ng CAS CL52 CL46
Operating Voltage 1.1 V 1.1 V
Configuration 1Rx4 (single rank, x4) —
Organisasyon 4G x 72 2Rx8 (dual rank, x8)
DRAM Devices 20 x 4G x 4 DDR5 DRAM, FBGA package —
ECC ECC Registered (on-die ECC + side-band) —
Form Factor 288-pin DIMM 288-pin RDIMM
Bandwidth 51.2 GB/s peak (PC5-51200) —
Rank Single Rank —
Compliance 100% JEDEC compliant —
Compatible Platforms Dell, HPE, Lenovo ThinkSystem, Supermicro (Xeon / EPYC DDR5 platforms) Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro DDR5 servers
Temperature na Operasyon [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
GTIN / EAN 4262552150022 —
Memory Capacity — 32 GB
Rate ng Data — 5600 MT/s (PC5-44800)
DRAM Composition — 20 x 2Gx8 FBGA DRAM components
Ranks — 2
Error Correction — On-die ECC (ODECC) + registered parity/CRC
DRAM Die — E-die (12nm-class process)
JEDEC Compliance — JEDEC PC5-44800R compliant
Module Supply — 12 V input with on-module PMIC (1.1 V DRAM rail)
Tindminan RoHS — Compliant
Peak Bandwidth — Approx. 44.8 GB/s per module

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