MRF5S9101NR1 vs MRF5S9101MR1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF5S9101NR1 sa pamamagitan ng NXP Semiconductors at MRF5S9101MR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors
MRF5S9101NR1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF5S9101NR1 | MRF5S9101MR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Obsolete |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF5S9101NR1 | — |
| Uri ng Transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Application | GSM / GSM EDGE base station PAs, 869–960 MHz | GSM / GSM EDGE / N-CDMA base station final-stage PA |
| Frequency Range | 869 MHz to 960 MHz | 869 MHz to 960 MHz |
| Test Frequency | 960 MHz | 960 MHz |
| Output Power (P1dB) | 100 W (typ) | — |
| Power Gain | 17.5 dB (typ at 960 MHz, 26 V, 700 mA) | 17.5 dB at 960 MHz |
| Drain Supply Voltage (Vdd) | 26 V (nominal), 28 V (max operating) | — |
| Drain Breakdown Voltage (Vdss) | 68 V | — |
| Quiescent Current (Idq) | 700 mA | — |
| Drain Current (Test) | 700 mA | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Junction Temperature (Max) | 200 °C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Packhaging / Kaso | TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold | TO-270 WB-4 (Case 1486-03, Style 1) |
| Uri ng Pagpapasok | Surface / Flange Mount (through-board thermal pad) | Chassis / Flange Mount (through-hole flange) |
| Lead-Free / RoHS | Lead-free (N suffix indicates lead-free transition) | — |
| Thermal Resistance (junction-to-case) | [DATA_NEEDED: theta_JC] | — |
| Technology | — | RF Power Field Effect Transistor |
| Test Voltage | — | 26 V |
| Test Current (Quiescent) | — | 700 mA |
| Power Output (POUT) | — | 100 W (CW) |
| Drain-Source Voltage (Rated) | — | 68 V |
| Drain Current Rating | — | [DATA_NEEDED: maximum continuous drain current] |
| Supplier Device Package | — | TO-270 WB-4 |
| Lead Free Status | — | Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent) |
| Tindminan RoHS | — | Compliant (lead-free N-suffix variants) |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Thermal Resistance Junction-to-Case | — | [DATA_NEEDED: RθJC value] |