MRF5S9101NR1 vs MRF5S9101MR1 مقایسه

مقایسه دقیق کنار به کنار MRF5S9101NR1 توسط NXP Semiconductors و MRF5S9101MR1 توسط NXP Semiconductors. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.

NXP Semiconductors
MRF5S9101NR1 MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors

MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors

MRF5S9101NR1 ✓ فعال
NXP Semiconductors
MRF5S9101MR1 MRF5S9101MR1 - 100W 869-960MHz RF Power LDMOS | NXP

MRF5S9101MR1 - 100W 869-960MHz RF Power LDMOS | NXP

MRF5S9101MR1 Obsolete

مقایسه مشخصات

پارامتر MRF5S9101NR1 MRF5S9101MR1
برند NXP Semiconductors NXP Semiconductors
دسته‌بندی MOSFETs MOSFETs
وضعیت چرخه عمر فعال Obsolete
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale Semiconductor)
Part Number MRF5S9101NR1 —
نوع ترانزیستور LDMOS, N-Channel Enhancement-Mode Lateral MOSFET LDMOS (N-Channel Enhancement-Mode Lateral MOSFET)
Application GSM / GSM EDGE base station PAs, 869–960 MHz GSM / GSM EDGE / N-CDMA base station final-stage PA
Frequency Range 869 MHz to 960 MHz 869 MHz to 960 MHz
Test Frequency 960 MHz 960 MHz
Output Power (P1dB) 100 W (typ) —
Power Gain 17.5 dB (typ at 960 MHz, 26 V, 700 mA) 17.5 dB at 960 MHz
Drain Supply Voltage (Vdd) 26 V (nominal), 28 V (max operating) —
Drain Breakdown Voltage (Vdss) 68 V —
Quiescent Current (Idq) 700 mA —
Drain Current (Test) 700 mA —
محدوده دمای کاری [DATA_NEEDED: operating temperature range] —
Junction Temperature (Max) 200 °C —
Storage Temperature Range [DATA_NEEDED: storage temperature range] —
بسته‌بندی / کیس TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold TO-270 WB-4 (Case 1486-03, Style 1)
نوع نصب Surface / Flange Mount (through-board thermal pad) Chassis / Flange Mount (through-hole flange)
Lead-Free / RoHS Lead-free (N suffix indicates lead-free transition) —
Thermal Resistance (junction-to-case) [DATA_NEEDED: theta_JC] —
Technology — RF Power Field Effect Transistor
Test Voltage — 26 V
Test Current (Quiescent) — 700 mA
Power Output (POUT) — 100 W (CW)
Drain-Source Voltage (Rated) — 68 V
Drain Current Rating — [DATA_NEEDED: maximum continuous drain current]
Supplier Device Package — TO-270 WB-4
Lead Free Status — Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent)
وضعیت RoHS — Compliant (lead-free N-suffix variants)
دمای کاری — [DATA_NEEDED: operating temperature range]
Storage Temperature — [DATA_NEEDED: storage temperature range]
Thermal Resistance Junction-to-Case — [DATA_NEEDED: RθJC value]

دیتاشیت‌ها و منابع

مرور همه محصولات ایجاد BOM درخواست استعلام قیمت