MRF6V3090NBR1 vs MRF6V3090NR1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF6V3090NBR1 sa pamamagitan ng NXP Semiconductors at MRF6V3090NR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF6V3090NBR1 MRF6V3090NBR1 - 90W RF Power LDMOS, 470-860 MHz | NXP

MRF6V3090NBR1 - 90W RF Power LDMOS, 470-860 MHz | NXP

MRF6V3090NBR1 ✓ Nakahanda
NXP Semiconductors
MRF6V3090NR1 MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF6V3090NBR1 MRF6V3090NR1
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) N-Channel Enhancement-Mode Lateral MOSFET (LDMOS)
Application RF Power Amplifier —
Frequency Band 470 MHz to 1215 MHz —
Typical Output Power (CW) 90 W at 860 MHz, 50 V —
Power Gain 22 dB at 860 MHz, 90 W CW —
Drain Supply Voltage (Vdd) 50 V DC —
Drain Current (Id) 350 mA (test condition) —
VSWR Tolerance 10:1 all phase angles, 50 V, 860 MHz, 90 W CW 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW
Packhaging / Kaso TO-272 WB-4 (ceramic) —
Uri ng Pagpapasok Surface Mount / Screw-Mount Chassis Surface Mount / Flange Mount with bolt-down heatsink
Configuration Single N-Channel MOSFET —
Channel Mode Enhancement-mode —
Hanay ng Temperature na Operasyon [DATA_NEEDED: operating temperature range] —
Thermal Resistance ng Junction-to-Case [DATA_NEEDED: theta_jc] —
Tindminan RoHS unknown [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt]
Lead-Free unknown —
Qualification Not Qualified (per partstack listing) —
Technology — LDMOS (Laterally Diffused MOSFET)
Drain-Source Voltage (VDS) — 50 V
Continuous Drain Current (ID) — 350 mA
Frequency Range — 470 MHz to 1215 MHz
Test Frequency — 860 MHz
Output Power (CW, Pout) — 90 W
Power Gain (typical) — 22 dB at 860 MHz
Drain Efficiency (typical) — [DATA_NEEDED: drain efficiency %]
Input Power (Pin) — [DATA_NEEDED: input drive level for 90 W Pout]
Package Type — TO-270 WB-4 (TO-272-4 family, ceramic air-cavity)
Temperature ng Junction na Operasyon — -40C to +200C (max TJ)
Thermal Resistance — [DATA_NEEDED: theta_JC value C/W]
Level ng MSL — [DATA_NEEDED: MSL rating]
Reel Quantity (R1 suffix) — 500 per reel (R1 = 500 unit reel)

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