MRF8P26080HSR3 vs MRF8S21100HSR3 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF8P26080HSR3 sa pamamagitan ng NXP Semiconductors at MRF8S21100HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF8P26080HSR3 MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP

MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP

MRF8P26080HSR3 ✓ Nakahanda
NXP Semiconductors
MRF8S21100HSR3 MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP

MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP

MRF8S21100HSR3 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF8P26080HSR3 MRF8S21100HSR3
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode Lateral MOSFET
Technology Gen8 LDMOS (Silicon, Lateral) LDMOS (Laterally Diffused MOSFET)
Frequency Range 2500 MHz to 2700 MHz 2110 MHz to 2170 MHz
Average Output Power (P3dB) 14 W (W-CDMA, single-carrier) —
Peak Output Power (CW) 80 W —
Drain-Source Voltage (VDSS max) 65 V —
Operating Drain Voltage (VDD) 28 V nominal 28 V nominal
Test Mode Typical Doherty Single-Carrier W-CDMA —
Application Class Class AB or Class C capable —
Modulation Formats W-CDMA, LTE, OFDM, multi-carrier —
Packhaging NI-780S-4 (ceramic, flange-mount, air-cavity) —
Uri ng Pagpapasok Through-hole flange-mount with screw attachment Chassis / flange mount, screw-down
Lead Finish Gold-plated (NiPdAu) —
Lead-Free / RoHS Compliant —
Hanay ng Temperature na Operasyon -40C to +150C (junction) —
Drain-Source Voltage (V(BR)DSS) — 65 V
Test Frequency — 2.14 GHz
Output Power (CW, typical) — 100 W
Average Output Power (W-CDMA) — 24 W
Power Gain (typ) — 18.3 dB at 2.14 GHz
Drain Current (ID, max) — [DATA_NEEDED: max ID rating]
Packhaging / Kaso — NI-780S (Case 465A-06), 3-pin ceramic flange
Configuration — Single, push-pull N/A
Operating Class — Class AB or Class C
Application — W-CDMA, LTE base-station power amplifiers
Tindminan RoHS — Compliant (per NXP product family)
Lead-Free — Yes

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