MRFG35010NT1 vs MRFG35003NT1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRFG35010NT1 sa pamamagitan ng NXP Semiconductors at MRFG35003NT1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRFG35010NT1 MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 Obsolete
NXP Semiconductors
MRFG35003NT1 MRFG35003NT1 - 3W, 3.5GHz GaAs PHEMT RF Power FET | NXP

MRFG35003NT1 - 3W, 3.5GHz GaAs PHEMT RF Power FET | NXP

MRFG35003NT1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRFG35010NT1 MRFG35003NT1
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs Transistors
Katayuan ng Lifecycle Obsolete Aktibo
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Part Number MRFG35010NT1 —
Uri ng Transistor GaAs pHEMT RF Power FET GaAs pHEMT N-channel RF Power FET
Drain-Source Voltage Rating (Vds) 15 V —
Continuous Drain Current Rating 2.9 A —
Operating Frequency 3.55 GHz —
Frequency Range 1.8 GHz to 3.6 GHz 1.8 GHz to 3.6 GHz
Test Voltage 12 V —
Test Current (quiescent) 180 mA —
Associated Power Gain 10 dB at 3.55 GHz —
Output Power 9 W at 3.55 GHz —
Configuration Unmatched, common source —
Class of Operation Class AB linear —
Packhaging / Kaso PLD-1.5 flanged ceramic PLD-1.5 (CASE 466-03, Style 1)
Supplier Device Package PLD-1.5 —
Uri ng Pagpapasok Chassis-mount / flange-bolt Surface Mount
Lead Free Status Lead free (per datasheet) —
Tindminan RoHS [DATA_NEEDED: RoHS status] Compliant
Technology — Gallium Arsenide Pseudomorphic HEMT
Test Frequency — 3.55 GHz
Rated Drain Voltage (VDS max) — 15 V
Continuous Drain Current — 1.3 A
Output Power (CW, typical) — 3 W
Power Gain (Gpss, min) — 11.5 dB at 3.55 GHz
Test Bias Voltage — 12 V
Test Quiescent Current (IDQ) — 55 mA (small-signal); 650 mA (W-CDMA pulsed)
Operating Class — Class AB linear
Matching — Unmatched (external matching network required)
Maximum Channel Temperature — 150 °C

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