MT40A512M16JY-075E vs E3AD8G16A4-HR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M16JY-075E sa pamamagitan ng Micron Technology at E3AD8G16A4-HR sa pamamagitan ng ELIXIR/NANYA. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-075E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT40A512M16JY-075E | E3AD8G16A4-HR |
|---|---|---|
| Brand | Micron Technology | ELIXIR/NANYA |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gbit | — |
| Organisasyon | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | — |
| Rate ng Data | 2666 MT/s | 3200 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| Interface | Parallel | — |
| Packhaging | 96-FBGA (8x14) | TFBGA-96 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | 0°C to +95°C (TC) | — |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | — |
| Tindminan RoHS | Compliant | — |
| Mga Karakteristika | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Density | — | 8 Gb |
| Volte ng Pagbibigay | — | 1.2 V |
| Latensya ng CAS | — | 22 |
| Burst Length | — | 8 (BC4 optional) |
| Number of Banks | — | 16 (4 bank groups) |
| Refresh | — | Auto-refresh and self-refresh |
| Temperature na Operasyon | — | 0C to +95C (TCASE) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Speed Grade | — | DDR4-3200 |