MT40A512M16JY-07EAIT:B vs AS4C512M16D4A-62BCN Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M16JY-07EAIT:B sa pamamagitan ng Micron Technology at AS4C512M16D4A-62BCN sa pamamagitan ng Alliance Memory. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Micron Technology
MT40A512M16JY-07EAIT:B MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-07EAIT:B ✓ Nakahanda
Alliance Memory
AS4C512M16D4A-62BCN AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4A-62BCN ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MT40A512M16JY-07EAIT:B AS4C512M16D4A-62BCN
Brand Micron Technology Alliance Memory
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory DDR4 SDRAM DDR4 SDRAM
Laki ng Memory 8 Gbit 8 Gbit
Organisasyon 512M x 16 512M x 16
Clock Frequency 1.33 GHz —
Rate ng Data 2666 MT/s 1600 MHz (3200 Mbps)
Supply Voltage (VDD/VDDQ) 1.2V ±60mV —
VPP Voltage 2.5V, -125mV, +250mV —
Interface Parallel POD (Pseudo Open Drain)
Packhaging 96-FBGA (8x14) 96-FBGA (7.5x13 mm)
Hanay ng Temperature na Operasyon -40°C to +105°C (AIT grade) —
Refresh Time 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C —
I/O Type 1.2V pseudo open-drain —
VREFDQ On-die, internal, adjustable —
AEC-Q100 Qualified (AIT suffix) —
RoHS Compliant —
Volte ng Pagbibigay — 1.2 V
Latensya ng CAS — 18 ns
Temperature na Operasyon — 0°C to 95°C
Uri ng Pagpapasok — Surface Mount
JEDEC Standard — Compliant
Refresh — Auto-refresh and self-refresh
On-Die Termination — Yes
Tindminan RoHS — Compliant
Packaging — Tray

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