MT40A512M16JY-07EAIT:B vs K4A8G085WC-BIWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M16JY-07EAIT:B sa pamamagitan ng Micron Technology at K4A8G085WC-BIWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | MT40A512M16JY-07EAIT:B | K4A8G085WC-BIWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gbit | — |
| Organisasyon | 512M x 16 | 1G x 8 |
| Clock Frequency | 1.33 GHz | — |
| Rate ng Data | 2666 MT/s | 3200 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V, -125mV, +250mV | — |
| Interface | Parallel | POD-12 |
| Packhaging | 96-FBGA (8x14) | 78-FBGA |
| Hanay ng Temperature na Operasyon | -40°C to +105°C (AIT grade) | -40°C to +95°C |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| I/O Type | 1.2V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable | — |
| AEC-Q100 | Qualified (AIT suffix) | — |
| RoHS | Compliant | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Uri ng Pagpapasok | — | Surface Mount |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Latensya ng CAS | — | 22 (CL22) |
| Refresh | — | Auto-refresh, self-refresh |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |