MT40A512M16LY-075:E vs AS4C512M16D4A-62BCN Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M16LY-075:E sa pamamagitan ng Micron Technology at AS4C512M16D4A-62BCN sa pamamagitan ng Alliance Memory. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Micron Technology
MT40A512M16LY-075:E MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron

MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron

MT40A512M16LY-075:E ✓ Nakahanda
Alliance Memory
AS4C512M16D4A-62BCN AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4A-62BCN ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MT40A512M16LY-075:E AS4C512M16D4A-62BCN
Brand Micron Technology Alliance Memory
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory DDR4 SDRAM DDR4 SDRAM
Laki ng Memory 8 Gbit (512M x 16) 8 Gbit
Rate ng Data 2666 MT/s 1600 MHz (3200 Mbps)
Clock Frequency 1.33 GHz —
Latensya ng CAS 19 18 ns
Supply Voltage (VDD/VDDQ) 1.2V ±60mV —
VPP Supply 2.5V (-125mV, +250mV) —
Interface Parallel POD (Pseudo Open Drain)
Packhaging 96-FBGA (7.5x13.5mm) 96-FBGA (7.5x13 mm)
Hanay ng Temperature na Operasyon 0°C to +95°C —
Refresh Time 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C —
Internal Banks (x16) 8 banks (4 groups of 2) —
I/O Type 1.2V pseudo open-drain —
RoHS Compliant —
Uri ng Pagpapasok Surface Mount Surface Mount
Organisasyon — 512M x 16
Volte ng Pagbibigay — 1.2 V
Temperature na Operasyon — 0°C to 95°C
JEDEC Standard — Compliant
Refresh — Auto-refresh and self-refresh
On-Die Termination — Yes
Tindminan RoHS — Compliant
Packaging — Tray

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