MT40A512M16LY-075:E vs H5AN8G6NDJR-XNC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M16LY-075:E sa pamamagitan ng Micron Technology at H5AN8G6NDJR-XNC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
MT40A512M16LY-075:E ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | MT40A512M16LY-075:E | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $55.68 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gbit (512M x 16) | 8 Gb |
| Rate ng Data | 2666 MT/s | 3200 Mbps |
| Clock Frequency | 1.33 GHz | — |
| Latensya ng CAS | 19 | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply | 2.5V (-125mV, +250mV) | — |
| Interface | Parallel | — |
| Packhaging | 96-FBGA (7.5x13.5mm) | FBGA-96 (13x7.5 mm) |
| Hanay ng Temperature na Operasyon | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Internal Banks (x16) | 8 banks (4 groups of 2) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| RoHS | Compliant | Compliant |
| Uri ng Pagpapasok | Surface Mount | — |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |