MT40A512M8RH-075E:B vs K4A4G085WF-BITD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M8RH-075E:B sa pamamagitan ng Micron Technology at K4A4G085WF-BITD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron
MT40A512M8RH-075E:B ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT40A512M8RH-075E:B | K4A4G085WF-BITD |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organisasyon | 512M x 8 | 512M x 8 |
| Rate ng Data | 2666 MT/s (DDR4-2666) | — |
| Clock Frequency | 1333 MHz (1.33 GHz) | — |
| VDD Supply Voltage | 1.2 V +/-60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/-60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV/+250 mV | — |
| Uri ng Interface | Parallel | — |
| I/O Structure | 1.2V pseudo open-drain | — |
| Tingnan ang Volte | On-die internal adjustable VREFDQ generation | — |
| Packhaging | 78-FBGA (9 x 10.5 mm), TFBGA | 78-ball FBGA (78FBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range (standard grade)] | -40C to +95C |
| Refresh | Refresh max interval extension at extended TC temperature range (125C capable per family features) | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) |
| Speed Grade Suffix | -075E | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Packaging Option Suffix | :B (ball map B designation per Mouser listing) | — |
| Speed | — | 2666 Mbps (MT/s) |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| Bank Architecture | — | 8 banks x 4 bank groups |
| Burst Length | — | BL8 |
| Latensya ng CAS | — | CL19 (typical at 2666 Mbps) |
| Interface | — | Parallel, DDR4 SSTL12 |
| Termination | — | ODT / dynamic ODT |
| Data Mask | — | DM supported (x8) |
| Application Grade | — | Industrial |