MT41K256M16TW-107 vs MT41K256M16TW-107:P Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT41K256M16TW-107 sa pamamagitan ng Micron Technology at MT41K256M16TW-107:P sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT41K256M16TW-107:P - 4Gb DDR3L SDRAM 933MHz | Micron
MT41K256M16TW-107:P ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT41K256M16TW-107 | MT41K256M16TW-107:P |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $14.10 | — |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4 Gbit | 4Gbit (256M x 16) |
| Organisasyon | 256M x 16 | — |
| Interface | Parallel | — |
| Clock Frequency | 933 MHz (DDR3L-1866) | 933 MHz |
| Access Time | 20 ns | — |
| Volte ng Pagbibigay | 1.35 V | 1.35V |
| Width ng Data Bus | 16 bit | — |
| Packhaging | 96-FBGA (8x14 mm) | 96-FBGA (8x14mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +95C (commercial :P grade) | 0°C to +95°C |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Rate ng Data | — | 1866 MT/s |
| I/O Voltage | — | 1.35V |
| Latensya ng CAS | — | 13 |
| tRCD | — | 20 ns |
| tRP | — | 20 ns |
| Burst Length | — | 8 |
| Lead-Free | — | Yes |