MT41K256M16TW-107:P vs NT5CC256M16ER-FLNA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT41K256M16TW-107:P sa pamamagitan ng Micron Technology at NT5CC256M16ER-FLNA sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT41K256M16TW-107:P - 4Gb DDR3L SDRAM 933MHz | Micron
MT41K256M16TW-107:P ✓ NakahandaNanya Technology
NT5CC256M16ER-FLNA - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CC256M16ER-FLNA ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT41K256M16TW-107:P | NT5CC256M16ER-FLNA |
|---|---|---|
| Brand | Micron Technology | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4Gbit (256M x 16) | — |
| Clock Frequency | 933 MHz | — |
| Rate ng Data | 1866 MT/s | 1866 Mbps (max) |
| Volte ng Pagbibigay | 1.35V | 1.35 V (1.283 V to 1.45 V) |
| I/O Voltage | 1.35V | 1.5 V |
| Latensya ng CAS | 13 | Programmable (e.g., 13, 14) |
| tRCD | 20 ns | — |
| tRP | 20 ns | — |
| Burst Length | 8 | 8, 4 (with burst chop) |
| Packhaging | 96-FBGA (8x14mm) | 96-ball TFBGA |
| Temperature na Operasyon | 0°C to +95°C | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Density | — | 4 Gb |
| Organisasyon | — | 256M x 16 |
| Number of Terminals | — | 96 |
| Hanay ng Temperature na Operasyon | — | 0°C to +95°C (commercial/industrial) |
| Number of Banks | — | 8 |
| Refresh | — | Auto and self refresh |
| RoHS | — | Compliant |