MW4IC2230MBR5 vs MRF7S21150HSR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MW4IC2230MBR5 sa pamamagitan ng NXP Semiconductors at MRF7S21150HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP
MRF7S21150HSR3 ObsoletePagsanggunian na paghahambing
| Parametro | MW4IC2230MBR5 | MRF7S21150HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | RF Amplifiers | MOSFETs |
| Katayuan ng Lifecycle | Obsolete | Obsolete |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1.6 GHz to 2.4 GHz | — |
| Output Power (Pout) | 30 W (CW) | — |
| Power Gain | 31 dB (typical) | 17.5 dB (typical at 2.14 GHz) |
| Supply Voltage (Vdd) | 26 V nominal | — |
| Quiescent Current (Idq) | 60 mA | — |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Packhaging / Kaso | TO-272 WB-16 Variant, Flat Leads (over-molded plastic) | — |
| Uri ng Pagpapasok | Surface Mount (with heatsink) | Flange / bolt-down with ceramic body |
| Operating Mode | Class AB (typical) | Class AB / Doherty |
| Supported Air Interfaces | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA | — |
| Input Matching | Internal wideband matching network | — |
| Tindminan RoHS | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS status] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Level ng MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Uri ng Transistor | — | N-Channel LDMOS RF Power MOSFET |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Test Voltage | — | 28 V |
| Rated Drain Voltage (Vds max) | — | 65 V |
| Average Output Power | — | 44 W (W-CDMA) |
| Peak Output Power | — | 150 W |
| Test Current | — | 1.35 A |
| Packhaging | — | NI-780S (NI-780 HS variant) |
| Configuration | — | Single, push-pull final stage |
| Lead Configuration | — | High-source-leads (HS) variant |
| Application | — | W-CDMA, LTE base station final-stage PA |
| JEDEC Qualification | — | JESD22 thermal/mechanical |