MW7IC18100NR1 vs MW7IC2040NR1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MW7IC18100NR1 sa pamamagitan ng NXP Semiconductors at MW7IC2040NR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MW7IC18100NR1 - 100W RF LDMOS 1.8-2.05GHz PA TO-270 | NXP
MW7IC18100NR1 ✓ NakahandaNXP Semiconductors
MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS
MW7IC2040NR1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MW7IC18100NR1 | MW7IC2040NR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | RF Amplifiers | RF Amplifiers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Product Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1.805 GHz to 2.05 GHz | — |
| Output Power (CW, typical) | 100 W (50 dBm) | — |
| Power Gain (typical) | 30 dB | — |
| P1dB (typical) | 25 W (44 dBm) CW | — |
| Supply Voltage (VDD) | 24 V to 32 V (28 V typical) | — |
| Supply Current (typical) | 1.18 A | — |
| RF Modulation Support | GSM, GSM EDGE, CDMA, W-CDMA | — |
| VSWR Ruggedness | 5:1 stable into mismatch | — |
| Spurious (100 mW to 5 W CW) | Below -60 dBc | — |
| Packhaging / Kaso | TO-270 WB-14 (Case 1618-02), plastic, flat leads | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount |
| Uri ng Pagpapasok | Surface Mount (gull-wing flat leads) | Surface Mount (PCB solderable with bottom drain ground plane) |
| Lead Finish | e3 (matte tin) | — |
| Temperature na Operasyon | -40C to +85C (case) | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) |
| Body Material | Plastic / Epoxy | — |
| Tindminan RoHS | Compliant | Compliant (per NXP product family) |
| Manufacturer | — | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) |
| Technology | — | RF LDMOS (Laterally Diffused MOSFET) |
| RF Type | — | General Purpose / Wideband Integrated Power Amplifier |
| Fungsi | — | Two-stage integrated power amplifier with on-chip matching |
| Frequency Range (Application) | — | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) |
| Frequency Range (Characterization) | — | 100 MHz to 1 GHz |
| Supply Voltage (Vdd) | — | 24 V to 32 V (nominal 28 V) |
| Maximum Supply Voltage | — | 32 V |
| Quiescent Supply Current (Idq) | — | 75 mA |
| Small-Signal Gain | — | 23.5 dB |
| Output Power (avg, W-CDMA) | — | 4 W (typical at rated operating conditions) |
| Modulation Compatibility | — | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats |
| Bilang ng Pin | — | 16 |
| Operating Mode | — | Class-AB (multi-stage, externally biased) |
| Lead Configuration | — | Flat leads (surface-mount) |
| Packaging Type | — | Tape & Reel (per part suffix NR1 suffix convention) |