MW7IC2220GNR1 vs MW7IC2220NBR1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MW7IC2220GNR1 sa pamamagitan ng NXP Semiconductors at MW7IC2220NBR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MW7IC2220GNR1 - 2W W-CDMA RF LDMOS PA 2.11-2.17 GHz | NXP
MW7IC2220GNR1 ✓ NakahandaNXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MW7IC2220GNR1 | MW7IC2220NBR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | RF Amplifiers | RF Amplifiers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | RF LDMOS, two-stage integrated | RF LDMOS (Laterally Diffused MOSFET) |
| Frequency Range (Usable) | 2000 MHz to 2200 MHz | — |
| Target Band | W-CDMA 2110-2170 MHz | — |
| Output Power (Avg, W-CDMA) | 2 W Avg. | — |
| Operating Voltage (VDD) | 28 V nominal (24 V to 32 V range) | — |
| Gain (Typ, 2.17 GHz) | 31 dB | — |
| Quiescent Current Stage 1 (IDQ1) | 80 mA | 80 mA |
| Quiescent Current Stage 2 (IDQ2) | 300 mA | 300 mA |
| Test Signal | Single-Carrier W-CDMA, PAR = 7.5 dB @ 0.01% CCDF | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB |
| ACPR Measurement | 3.84 MHz channel, +/-5 MHz offset | 3.84 MHz channel bandwidth at +/-5 MHz offset |
| Packhaging | TO-270 WBL-16 Gull-Wing (16-pin plastic overmold) | — |
| Uri ng Pagpapasok | Surface Mount (Gull-Wing leads) | Surface Mount (flange/over-molded) |
| Input/Output Matching | On-chip 50 ohm matching | — |
| Lead-Free / RoHS | RoHS compliant per NXP product page | — |
| Operating Case Temperature | [DATA_NEEDED: operating case temperature] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (RthJC) | [DATA_NEEDED: theta_JC] | — |
| Fungsi | — | W-CDMA Wideband Integrated Power Amplifier |
| Frequency Range | — | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) |
| Operating Frequency (typical) | — | 2167.5 MHz |
| Average Output Power | — | 2 W (33 dBm) |
| Drain Supply Voltage (VDD) | — | 28 V (24 V to 32 V operating range) |
| Small-Signal Gain | — | 31 dB (typical at 2.17 GHz) |
| Package Type | — | TO-272WB-16 (over-molded plastic) |
| Input Matching | — | On-chip (50 ohm nominal) |
| Output Matching | — | On-chip (50 ohm nominal) |
| Characteristic Impedance | — | 50 ohm |
| Maximum Operating Temperature | — | 150 C |
| Modulation Support | — | W-CDMA, TD-SCDMA, LTE, multi-carrier |