MW7IC2220GNR1 vs MW7IC2220NBR1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MW7IC2220GNR1 tarafından NXP Semiconductors ve MW7IC2220NBR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ AktifÖzellik Karşılaştırması
| Parametre | MW7IC2220GNR1 | MW7IC2220NBR1 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | RF Amplifiers | RF Amplifiers |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Technology | RF LDMOS, two-stage integrated | RF LDMOS (Laterally Diffused MOSFET) |
| Frequency Range (Usable) | 2000 MHz to 2200 MHz | — |
| Target Band | W-CDMA 2110-2170 MHz | — |
| Output Power (Avg, W-CDMA) | 2 W Avg. | — |
| Operating Voltage (VDD) | 28 V nominal (24 V to 32 V range) | — |
| Gain (Typ, 2.17 GHz) | 31 dB | — |
| Quiescent Current Stage 1 (IDQ1) | 80 mA | 80 mA |
| Quiescent Current Stage 2 (IDQ2) | 300 mA | 300 mA |
| Test Signal | Single-Carrier W-CDMA, PAR = 7.5 dB @ 0.01% CCDF | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB |
| ACPR Measurement | 3.84 MHz channel, +/-5 MHz offset | 3.84 MHz channel bandwidth at +/-5 MHz offset |
| Paket | TO-270 WBL-16 Gull-Wing (16-pin plastic overmold) | — |
| Montaj Türü | Surface Mount (Gull-Wing leads) | Surface Mount (flange/over-molded) |
| Input/Output Matching | On-chip 50 ohm matching | — |
| Lead-Free / RoHS | RoHS compliant per NXP product page | — |
| Operating Case Temperature | [DATA_NEEDED: operating case temperature] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (RthJC) | [DATA_NEEDED: theta_JC] | — |
| Fonksiyon | — | W-CDMA Wideband Integrated Power Amplifier |
| Frequency Range | — | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) |
| Operating Frequency (typical) | — | 2167.5 MHz |
| Average Output Power | — | 2 W (33 dBm) |
| Drain Supply Voltage (VDD) | — | 28 V (24 V to 32 V operating range) |
| Small-Signal Gain | — | 31 dB (typical at 2.17 GHz) |
| Package Type | — | TO-272WB-16 (over-molded plastic) |
| Input Matching | — | On-chip (50 ohm nominal) |
| Output Matching | — | On-chip (50 ohm nominal) |
| Characteristic Impedance | — | 50 ohm |
| Maximum Operating Temperature | — | 150 C |
| Modulation Support | — | W-CDMA, TD-SCDMA, LTE, multi-carrier |