N25Q032A13EF4A0F vs N25Q256A13E12A0F Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng N25Q032A13EF4A0F sa pamamagitan ng Micron Technology at N25Q256A13E12A0F sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
N25Q032A13EF4A0F - 32Mbit SPI NOR Flash 108MHz | Micron
N25Q032A13EF4A0F ✓ NakahandaMicron Technology
N25Q256A13E12A0F - 256Mb SPI NOR Flash, 108MHz | Micron
N25Q256A13E12A0F ✓ NakahandaPagsanggunian na paghahambing
| Parametro | N25Q032A13EF4A0F | N25Q256A13E12A0F |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | FLASH - NOR Memory IC (Serial) | NOR Flash, Serial SPI |
| Laki ng Memory | 32 Mbit (4 MB) | — |
| Interface | SPI (Multi-I/O) | — |
| Clock Frequency | 108 MHz | — |
| Volte ng Pagbibigay | 3 V (2.7 V to 3.6 V) | 2.7 V to 3.6 V |
| Packhaging | 8-UFDFPN (MLP8) 4 x 3 mm | 24-ball T-PBGA (6x8 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Read Modes | Standard, Dual, Quad SPI | — |
| Erase Granularity | 4 KB subsector / 64 KB sector | — |
| Grade | Automotive | — |
| Write Cycle Endurance | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: retention years] | [DATA_NEEDED: data retention years] |
| Temperature na Operasyon | [DATA_NEEDED: temperature range] | -40C to +125C |
| Access Time | [DATA_NEEDED: access time] | 8 ns (per FindIC listing) |
| Program/Erase Speed | [DATA_NEEDED: page program time] | — |
| Tindminan RoHS | Compliant | Compliant |
| Packaging | Tape & Reel (T&R) | Tape & Reel (TR suffix) |
| Density | — | 256 Mbit (32 MB) |
| Organisasyon | — | 64M x 4 (Mouser listing); 32M x 8 per FindIC listing - see validation note |
| Max SPI Clock Frequency | — | 108 MHz |
| I/O Modes | — | Single, Dual, Quad I/O (Multiple I/O Serial Flash) |
| Technology | — | SLC (Single-Level Cell) |
| Sector Erase Size | — | 4 KB |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: ICC read current] |
| Standby Current | — | [DATA_NEEDED: ICC standby current] |