NT5CC256M16DP-DI vs MT40A512M16JY-07EAIT:B Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16DP-DI sa pamamagitan ng Nanya Technology at MT40A512M16JY-07EAIT:B sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5CC256M16DP-DI | MT40A512M16JY-07EAIT:B |
|---|---|---|
| Brand | Nanya Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR4 SDRAM |
| Density | 4Gb | — |
| Organisasyon | 256M x 16 | 512M x 16 |
| Volte ng Pagbibigay | 1.35V | — |
| Rate ng Data | 1600 Mbps/pin (800MHz) | 2666 MT/s |
| Packhaging | VFBGA-96 | 96-FBGA (8x14) |
| Hanay ng Temperature na Operasyon | -40°C to +95°C (industrial) | -40°C to +105°C (AIT grade) |
| Latensya ng CAS | 11, 12, 13 (programmable) | — |
| Burst Length | 8, 4 (with burst chop) | — |
| Number of Banks | 8 | — |
| Interface | Differential clock (CK, CK#) | Parallel |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Laki ng Memory | — | 8 Gbit |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Voltage | — | 2.5V, -125mV, +250mV |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| I/O Type | — | 1.2V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable |
| AEC-Q100 | — | Qualified (AIT suffix) |