NT5CC256M16DP-DIH vs NT5CC256M16DP-DI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16DP-DIH sa pamamagitan ng Nanya Technology at NT5CC256M16DP-DI sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Nanya Technology
NT5CC256M16DP-DIH - 4Gb DDR3L SDRAM 256Mx16 1.35V | Nanya
NT5CC256M16DP-DIH ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5CC256M16DP-DIH | NT5CC256M16DP-DI |
|---|---|---|
| Brand | Nanya Technology | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | 4Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Volte ng Pagbibigay | 1.35 V | 1.35V |
| Rate ng Data | 1600 Mbps (DDR3-1600) | 1600 Mbps/pin (800MHz) |
| Packhaging | 96-ball VFBGA | VFBGA-96 |
| Hanay ng Temperature na Operasyon | 0°C to +95°C | -40°C to +95°C (industrial) |
| Latensya ng CAS | 11 (typical) | 11, 12, 13 (programmable) |
| Burst Length | 8, 4 | 8, 4 (with burst chop) |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| RoHS | Compliant | Compliant |
| Number of Banks | — | 8 |
| Interface | — | Differential clock (CK, CK#) |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination | — | Yes (ODT) |
| Lead-Free | — | Yes |