RMLV0816BGSD-4S2#AC0 vs RMLV0816BGSD-4S2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RMLV0816BGSD-4S2#AC0 sa pamamagitan ng Renesas Electronics at RMLV0816BGSD-4S2 sa pamamagitan ng Renesas Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Renesas Electronics
RMLV0816BGSD-4S2#AC0 - 8Mb Advanced LPSRAM | Renesas | TSOP-II 52
RMLV0816BGSD-4S2#AC0 ✓ NakahandaRenesas Electronics
RMLV0816BGSD-4S2 - 8Mb Low-Power SRAM 512Kx16 45ns TSOP | Renesas
RMLV0816BGSD-4S2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RMLV0816BGSD-4S2#AC0 | RMLV0816BGSD-4S2 |
|---|---|---|
| Brand | Renesas Electronics | Renesas Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | Volatile SRAM (LPSRAM) | Static RAM (SRAM), Asynchronous |
| Laki ng Memory | 8 Mbit | — |
| Organisasyon | 524,288-word × 16-bit (configurable to 1M × 8) | 524,288-word x 16-bit (512K x 16) |
| Bus Width | Parallel, 8-bit or 16-bit | — |
| Uri ng Interface | Parallel (asynchronous) | — |
| Access Time | 45 ns | 45 ns |
| Supply Voltage (VCC) | 2.4 V to 3.6 V | 2.7 V to 3.6 V |
| Hanay ng Temperature na Operasyon | -40 °C to +85 °C | -40 C to +85 C (industrial) |
| Package Type | 52-TSOP II | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Technology | Renesas Advanced LPSRAM CMOS | Renesas Advanced LPSRAM CMOS |
| Output Kumpigurasyon | Three-state (with OE# control) | — |
| Byte Control | UB# (upper byte), LB# (lower byte) | /LB and /UB (lower/upper byte enable) |
| Write Control | WE# (active-low) | — |
| Chip Enable | CE# (active-low) | — |
| Level ng MSL | MSL3 (per JEDEC J-STD-020, where stated in the datasheet) | 3 (per JEDEC J-STD-020, typical for TSOP-II) |
| Tindminan RoHS | Compliant | Compliant |
| Data Retention Voltage (typical) | 2.0 V [DATA_NEEDED: confirm from datasheet retention section] | — |
| Memory Subcategory | — | Low-Power SRAM (LPSRAM) |
| Memory Density | — | 8 Mbit |
| Interface | — | Parallel (asynchronous) |
| Packhaging | — | 52-pin TSOP-II |
| Output Enable (/OE) | — | Yes |
| Write Enable (/WE) | — | Yes |
| Chip Select (/CS) | — | Yes |
| I/O Compatibility | — | TTL-compatible |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Active Current | — | [DATA_NEEDED: operating current] |