RTAX1000S-LG624V vs RTAX1000SL-LG624E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX1000S-LG624V sa pamamagitan ng Microchip Technology at RTAX1000SL-LG624E sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX1000S-LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-LG624V ✓ NakahandaMicrochip Technology
RTAX1000SL-LG624E - 1M-Gate Rad-Tolerant FPGA 624-LGA | Microchip
RTAX1000SL-LG624E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX1000S-LG624V | RTAX1000SL-LG624E |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | RTAX-SL Radiation-Tolerant FPGA |
| Equivalent System Gates | 1,000,000 | 1,000,000 |
| Logic Cells | 18144 | — |
| Configurable Logic Blocks (CLBs) | 12096 | — |
| Technology | Digital CMOS, antifuse-based | — |
| Core Supply Voltage | 1.5 V (nominal) | 1.5 V |
| Configuration Type | One-Time Programmable (antifuse), live at power-up | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | — |
| Packhaging | CG624 (624-pin ceramic column grid array, LG624) | 624-Pin LGA (CBGA624), Ceramic |
| Temperature na Operasyon | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Application Domain | Space-flight systems, radiation-tolerant | — |
| Maximum Family Density | 4,000,000 equivalent system gates (family) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Number of User I/O | [DATA_NEEDED: number of user I/O for LG624 package] | — |
| Block RAM Capacity | [DATA_NEEDED: embedded SRAM bit capacity] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| ASIC Gates | — | 125,000 |
| Logic Cells (CLBs) | — | 12,096 |
| Maximum Combinatorial Delay per CLB | — | 0.93 ns |
| Maximum Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Packaging | — | Box |
| Technology Base | — | CMOS, Antifuse |
| Configuration | — | Live-at-power-up (no external configuration device) |
| I/O Voltage Range | — | [DATA_NEEDED: I/O voltage range] |
| TID Rating | — | [DATA_NEEDED: total ionizing dose rating] |
| SEU Immunity | — | [DATA_NEEDED: single-event upset immunity figure] |