RTAX1000SL-LG624E vs RTAX1000S-1LG624V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX1000SL-LG624E sa pamamagitan ng Microchip Technology at RTAX1000S-1LG624V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX1000SL-LG624E - 1M-Gate Rad-Tolerant FPGA 624-LGA | Microchip
RTAX1000SL-LG624E ✓ NakahandaMicrochip Technology
RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-1LG624V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX1000SL-LG624E | RTAX1000S-1LG624V |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | RTAX-SL Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 1,000,000 | 1000000 |
| ASIC Gates | 125,000 | — |
| Logic Cells (CLBs) | 12,096 | — |
| Maximum Combinatorial Delay per CLB | 0.93 ns | — |
| Maximum Frequency | 581 MHz | — |
| Process Technology | 0.15 um CMOS | — |
| Core Supply Voltage | 1.5 V | — |
| Packhaging | 624-Pin LGA (CBGA624), Ceramic | LG624 (624-ball ceramic column grid array) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packaging | Box | — |
| Technology Base | CMOS, Antifuse | — |
| Configuration | Live-at-power-up (no external configuration device) | Nonvolatile, live at power-up, single chip |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| I/O Voltage Range | [DATA_NEEDED: I/O voltage range] | — |
| TID Rating | [DATA_NEEDED: total ionizing dose rating] | — |
| SEU Immunity | [DATA_NEEDED: single-event upset immunity figure] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Logic Cells | — | 18144 |
| CLBs | — | 12096 |
| Maximum User I/Os | — | 418 |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC |
| Technology | — | CMOS antifuse (one-time programmable) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Combinatorial Delay (max) | — | 0.93 ns |
| Speed Grade | — | -1 |
| Radiation Tolerance Class | — | Rad-tolerant (space flight) |
| Architecture Family | — | RTAX-S (based on Axcelerator) |
| Screening | — | [DATA_NEEDED: screening flow per order code suffix] |
| Supply Voltage (Core) | — | [DATA_NEEDED: core supply voltage] |