RTAX2000DL-1CQ352V vs RTAX1000SL-CQ352V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000DL-1CQ352V sa pamamagitan ng Microchip Technology at RTAX1000SL-CQ352V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352V ✓ NakahandaMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX2000DL-1CQ352V | RTAX1000SL-CQ352V |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | RTAX-DSP (RTAX2000DL) | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Equivalent System Gates | 2,000,000 (approx.) | 1,000,000 |
| Logic Cells | 29,568 | 18,144 |
| CLBs | 19,712 | — |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | — |
| Technology | Digital CMOS | — |
| Programming Technology | Antifuse (one-time programmable) | Antifuse (one-time programmable) |
| Radiation Tolerance | Radiation-tolerant (RTAX-DSP) | Radiation-tolerant, space-flight qualified family |
| Configuration | Live at power-up, no external boot memory | — |
| Speed Grade | -1 | — |
| Packhaging | CQ352 (352-pin ceramic QFP) | 352-pin Ceramic CQFP (CQ352V) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | — |
| Special Features | DSP multiply-accumulate blocks (DL variant) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS compliance status] |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Embedded SRAM | [DATA_NEEDED: Embedded SRAM capacity] | — |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Voltage | — | 1.5 V |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| Embedded Memory | — | Embedded SRAM with built-in FIFO control logic |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |