RTAX2000S-1CGS624V vs RTAX2000SL-1CGS624V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000S-1CGS624V sa pamamagitan ng Microchip Technology at RTAX2000SL-1CGS624V sa pamamagitan ng Microsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX2000S-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CGS624V ✓ NakahandaMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX2000S-1CGS624V | RTAX2000SL-1CGS624V |
|---|---|---|
| Brand | Microchip Technology | Microsemi |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | RTAX-S Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 2,000,000 | 2000000 |
| Configurable Logic Blocks (CLBs) | 21,504 | — |
| Total Logic Cells | 32,256 | — |
| ASIC Gate Capacity (companion) | 250,000 gates | — |
| Core Supply Voltage (nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Logic Family | CMOS | — |
| Speed Grade | -1 | -1 |
| Temperature na Operasyon | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Packhaging | CG624 Ceramic Column Grid Array (CCGA), 624 balls | 624-ball ceramic CGA (CGS624) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Programming Technology | Antifuse (one-time programmable) | — |
| SEU Hardening | SEU-hardened registers, immune to single-event upsets | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC |
| Configuration | Live at power-up, single-chip (no external config device) | One-time programmable (OTP), live at power-up, single chip |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Weight | [DATA_NEEDED: package weight] | — |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Technology | — | Digital CMOS, antifuse nonvolatile |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |