RTAX2000SL-1LG1152V vs RTAX2000S-1LG624V Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000SL-1LG1152V sa pamamagitan ng Microchip Technology at RTAX2000S-1LG624V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Microchip Technology
RTAX2000SL-1LG1152V RTAX2000SL-1LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-1LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-1LG1152V ✓ Nakahanda
Microchip Technology
RTAX2000S-1LG624V RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip

RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip

RTAX2000S-1LG624V ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro RTAX2000SL-1LG1152V RTAX2000S-1LG624V
Brand Microchip Technology Microchip Technology
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family RTAX-S/SL Radiation-Tolerant FPGAs —
Equivalent Gate Count 2,000,000 gates —
Logic Cells 32,256 —
Configurable Logic Blocks (CLBs) 21,504 21,504
Programming Technology Antifuse (one-time programmable) One-time programmable antifuse, nonvolatile
Radiation Tolerance Radiation-tolerant (space flight grade) —
Speed Grade -1 -1
Packhaging CG1152 (1152-pin ceramic column grid array) CG624, 624-pin ceramic column grid array
Quality Suffix V (flight grade) —
Configuration Live at power-up, single chip (no external boot PROM) Single-chip, live at power-up (no boot device required)
Core Voltage [DATA_NEEDED: core voltage] —
Temperature na Operasyon [DATA_NEEDED: operating temperature range] —
Process Technology Digital CMOS Digital CMOS
Uri ng Pagpapasok Surface Mount Surface Mount
User I/O [DATA_NEEDED: user I/O count] —
Tindminan RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Equivalent System Gates — 2,000,000 gates
User I/Os (maximum, family) — Up to 684
Embedded Memory — Up to 540 kbits SRAM with optional EDAC protection
Total Ionizing Dose (TID), functional — 300 krad (Si)
Total Ionizing Dose (TID), parametric — 200 krad (Si)
SEU Immunity — Less than 1E-10 errors per bit-day
Package Temperature Suffix — V (space/military screening variant)
Family Lineage — RTAX-S/SL, based on commercial Axcelerator family
Hanay ng Temperature na Operasyon — [DATA_NEEDED: operating temperature range]
Core Supply Voltage — [DATA_NEEDED: core supply voltage]

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