SRF7S27125HSR3 vs MRF6V2150NBR5 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng SRF7S27125HSR3 sa pamamagitan ng NXP Semiconductors at MRF6V2150NBR5 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
SRF7S27125HSR3 SRF7S27125HSR3 - 125W RF Power LDMOSFET, 27V | NXP Semiconductors

SRF7S27125HSR3 - 125W RF Power LDMOSFET, 27V | NXP Semiconductors

SRF7S27125HSR3 ✓ Nakahanda
NXP Semiconductors
MRF6V2150NBR5 MRF6V2150NBR5 - 150W 50V RF MOSFET TO-272 | NXP

MRF6V2150NBR5 - 150W 50V RF MOSFET TO-272 | NXP

MRF6V2150NBR5 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro SRF7S27125HSR3 MRF6V2150NBR5
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Product Type RF Power LDMOSFET —
Manufacturer NXP Semiconductors (formerly Freescale) —
Drain-Source Voltage (VDS) 27 V (typical operating) 110 V
Output Power (CW) 125 W —
Frequency Band UHF (470 MHz to 860 MHz typical) —
Technology LDMOS (Laterally Diffused MOSFET) —
Packhaging NI-880S ceramic flange-mount TO-272 WB-4 (TO-272W, 5-pin, ceramic, bolt-down)
Uri ng Pagpapasok Flange-mount, bolt-down (2 tabs) Chassis/Surface Mount (bolt-down with ceramic insulator)
Polarity N-Channel —
Mode of Operation CW (continuous wave) capable CW (continuous wave), large-signal
Application Domain UHF broadcast transmitter PA, industrial RF —
Temperature na Operasyon [DATA_NEEDED: operating temperature range] —
Storage Temperature [DATA_NEEDED: storage temperature range] —
Thermal Resistance [DATA_NEEDED: RthJC value] —
Lead-Free / RoHS [DATA_NEEDED: RoHS compliance status] —
Input Matching Internal, broadband —
ESD Protection Integrated —
Gain (typical) [DATA_NEEDED: gain at operating frequency] —
Drain Efficiency [DATA_NEEDED: typical drain efficiency] —
Uri ng Transistor — N-Channel Enhancement-Mode Lateral RF Power MOSFET
Drain-Source Voltage (VDSS, max) — 110 V
Operating Drain Voltage (VDD) — 50 V
Continuous Drain Current (ID) — [DATA_NEEDED: ID max]
Output Power (POUT, CW) — 150 W
Operating Frequency Range — 10 MHz to 450 MHz
Power Gain (Gps) — 25 dB
Drain Efficiency (typ) — [DATA_NEEDED: drain efficiency %]
Configuration — Single-ended, unmatched
Level ng MSL — Not applicable (hermetic ceramic package)
Tindminan RoHS — [DATA_NEEDED: RoHS status]
Hanay ng Temperature na Operasyon — -40 C to +150 C (TJ max 200 C)
Lead-Free — [DATA_NEEDED: lead-free status]

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