IPT015N10NF2SATMA1 - 100V 315A 1.5mΩ OptiMOS MOSFET | Infineon
MPN: IPT015N10NF2SATMA1 ✓ NakahandaIPT015N10NF2SATMA1 Ulas
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current between drain and source terminals when a sufficient gate-source voltage is applied. N-channel enhancement-mode MOSFETs like this one are the dominant building block of modern switched-mode power supplies (SMPS), motor drives, and battery management systems because they switch faster, dissipate less conduction loss than equivalent P-channel parts, and scale to very high currents. Within the broader power-semiconductor taxonomy, the IPT015N10NF2SATMA1 sits at the level of discrete MOSFET -> trench MOSFET -> OptiMOS 100V family -> low-voltage high-current SMPS segment.
Key differentiating features include an exceptionally low 1.5 mΩ RDS(on) which directly reduces I²R conduction loss in high-current paths, a 315 A continuous drain current capability (at Tc) that enables parallel-free design at >200 A load, and an exposed source-down HSOF-8 tab providing very low thermal resistance to PCB copper. The OptiMOS generation also delivers low Qg and Qgd figures, which minimize gate-drive losses at high switching frequencies and reduce dv/dt-induced ringing.
Architecturally, the part is built on Infineon's OptiMOS 100V platform using a stripe-cell trench layout, with the source metallization bonded to the exposed pad of the HSOF-8 package. This source-down configuration removes the typical source-bond-wire inductance and routes high current directly into the PCB copper plane, which both improves SOA robustness and lowers RθJA by spreading heat across both board sides. The integrated gate-protection network and avalanche-rated single-pulse avalanche energy further increase ruggedness in motor-drive and inductive-load applications.
Typical applications include high-current server and telecom switched-mode power supplies (SMPS), 48 V e-mobility and mild-hybrid bus converters, brushless DC (BLDC) and permanent-magnet synchronous motor drives, battery management systems for power tools and energy storage, and high-current OR-ing / hot-swap circuits. The combination of 100 V rating, sub-2 mΩ RDS(on), and HSOF-8 footprint makes the part a strong fit where the previous generation of TO-220 or D²PAK parts would have run too hot.
When designing with this MOSFET, the most important trade-off is the relationship between switching loss and conduction loss. Because RDS(on) is already very low, the designer can usually afford to switch faster (50–100 kHz or higher) to shrink magnetics, as long as gate-drive layout keeps the gate-loop inductance minimal. The exposed tab must be soldered to a sufficiently large copper area to keep junction temperature within the 175 °C absolute maximum.
This page synthesizes distributor pricing, drop-in alternative cross-references, and practical design considerations not consolidated in the manufacturer datasheet alone, giving engineers a single source for parametric, sourcing, and PCB layout decisions.
Mga alternatibo na pwedeng ilagay na IPT015N10NF2SATMA1 — parehas na package, pin-to-pin na katugmang. Hindi kasama ang mga bahagi ng iba't-ibang package na nangangailangan ng pagpapaayos ng PCB.
Variante sa Seri na ito
Katulad na modelo sa serye na katugma sa pagpasok IPT015N10NF2SATMA1 (parehas na form factor at footprint) — pagkakaiba sa Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Operating Junction Temperature.
IPT017N12NM6ATMA1
✅ Drop-InMagkontak para sa presyo
Tingnan ang Datasheet →IPB021N10NM5LF2ATMA1
✅ Drop-InMagkontak para sa presyo
Tingnan ang Datasheet →BSC070N10NS5ATMA1
✅ Drop-InMagkontak para sa presyo
Tingnan ang Datasheet →VBGQT1101
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
IPTG025N15NM6ATMA1
✅ Drop-InMagkontak para sa presyo
Tingnan ang Datasheet →IPT015N10NF2SATMA1 Mga Pinakamataas na Rating at Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 315 A |
| Continuous Drain Current (ID, Ta) | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | 3.8 W |
| Total Power Dissipation (Tc) | 300 W |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C |
| Packhaging | PG-HSOF-8-10 (9-pin, 8+tab) |
| Uri ng Pagpapasok | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement |
| Gate Drive Voltage (typ) | 10 V |
| Tindminan RoHS | Compliant |
Pin Configuration ng IPT015N10NF2SATMA1
| Pin 1 | Source — Source terminal (connected to exposed tab) |
| Pin 2 | Source — Source terminal (connected to exposed tab) |
| Pin 3 | Source — Source terminal (connected to exposed tab) |
| Pin 4 | Source — Source terminal (connected to exposed tab) |
| Pin 5 | Gate — Gate drive input |
| Pin 6 | Source — Source terminal (connected to exposed tab) |
| Pin 7 | Source — Source terminal (connected to exposed tab) |
| Pin 8 | Source — Source terminal (connected to exposed tab) |
| Pin 9 | Drain (Tab) — Drain terminal and thermal pad (exposed tab) |
Ligtas na Operating Area (DC, TC=25°C)
Tipikal na mga Gamit
IPT015N10NF2SATMA1 ay nararapat para sa 6 aplikasyons: High-Current SMPS Primary Switch, 48V Mild-Hybrid eMobility Bus Converter, BLDC / PMSM Motor Drive Three-Phase Bridge, Battery Management System (BMS) High-Current Path, Hot-Swap / OR-ing Controller Switch, Industrial Welding and Plasma-Cut Inverter.
High-Current SMPS Primary Switch
The IPT015N10NF2SATMA1's 1.5 mΩ RDS(on) at 10 V VGS and 315 A continuous drain current at Tc make it an excellent primary-side switch in 48 V-input telecom and server SMPS designs switching at 50–100 kHz. The 100 V VDS rating comfortably covers 72 V nominal bus plus inductive transients from 1:1 or 2:1 turns-ratio transformers, while the source-down HSOF-8 tab routes up to 100 A of average drain current directly into PCB copper without bond-wire inductance. Compared to a TO-220 or D²PAK alternative, this part reduces conduction loss by ~40 % at 100 A and shrinks the primary-side footprint, allowing higher power density in 1U and 2U server rectifiers. Source-pin layout simplifies gate-drive return-path design and reduces dv/dt-induced ringing in hard-switched PFC and LLC topologies.
Inirekomenda
48V Mild-Hybrid eMobility Bus Converter
In 48 V mild-hybrid eMobility systems the IPT015N10NF2SATMA1 serves as the synchronous-rectifier MOSFET in 48 V to 12 V buck converters carrying up to 100 A continuous. The 100 V VDS rating provides ample margin for 48 V transients up to 52 V plus inductive ringing on the 12 V output side, while the 1.5 mΩ RDS(on) reduces rectifier-side conduction loss by ~30 % versus the prior-generation 3 mΩ D²PAK part. The -55 °C to +175 °C operating range and source-down HSOF-8 footprint allow two-sided PCB cooling that survives under-hood ambient swings. Validated SOA at 100 V and 200 A pulsed (1 ms) supports engine-start and load-dump profiles common in 48 V bus systems.
Inirekomenda
BLDC / PMSM Motor Drive Three-Phase Bridge
For three-phase brushless DC (BLDC) and permanent-magnet synchronous motor (PMSM) drives in industrial automation, the IPT015N10NF2SATMA1 provides six low-side switches capable of >100 A peak per phase. The 1.5 mΩ RDS(on) minimizes I²R loss during high-torque operation, extending continuous torque by ~15 % versus a 3 mΩ alternative, while the 100 V VDS covers 48 V and 60 V bus motors with adequate avalanche margin for back-EMF transients at commutation. The HSOF-8 source-down footprint enables a compact three-phase inverter stage on a 60 mm square PCB and supports double-sided cooling via the exposed tab. The part is widely used in industrial servo drives, AGV traction, and CNC spindle motor inverters up to 10 kW.
Inirekomenda
Battery Management System (BMS) High-Current Path
In battery management systems for power tools, garden equipment, and energy storage, the IPT015N10NF2SATMA1 serves as the protection MOSFET in series with battery cells carrying up to 200 A continuous discharge. The 1.5 mΩ RDS(on) minimizes the voltage drop across the protection switch (300 mV at 200 A) which directly preserves battery runtime by reducing wasted power in the protection path. The 100 V VDS supports 10S–20S lithium packs with headroom, and the 175 °C junction temperature maximum allows sustained operation near full power. The HSOF-8 footprint and exposed thermal pad enable pack-internal mounting with PCB-side cooling, while the low threshold voltage of 3.8 V ensures compatibility with 3.3 V MCU-driven gate drives.
Inirekomenda
Hot-Swap / OR-ing Controller Switch
The IPT015N10NF2SATMA1 is well-suited for 48 V telecom hot-swap and OR-ing switches where it carries the full bus current into backplane loads. Its 1.5 mΩ RDS(on) limits steady-state voltage drop to less than 150 mV at 100 A, preserving efficiency in N+1 redundant supplies. The 315 A pulsed rating supports inrush transients during hot-swap events, and the 100 V VDS provides a 30 % margin over typical 48 V nominal / 60 V transient telecom envelopes. The source-down HSOF-8 footprint simplifies routing of high-current planes, while the wide operating temperature range supports outdoor telecom cabinet installations. In OR-ing applications two devices back-to-back achieve bidirectional blocking without an additional series diode.
Inirekomenda
Industrial Welding and Plasma-Cut Inverter
In industrial welding and plasma-cut inverters the IPT015N10NF2SATMA1 functions as the primary-side or secondary-side switch handling pulsed currents exceeding 300 A at low duty cycle. The 315 A continuous drain current rating at Tc and the low RDS(on) of 1.5 mΩ allow the inverter to deliver >20 kW peak welding current while keeping junction temperature rise within safe limits. The 100 V VDS rating covers secondary-rectifier service in 60 V-class welding outputs and primary-side switching in rectified 400 V input inverters via clamping. The HSOF-8 source-down footprint supports high-density PCB layouts with double-sided cooling that survive the harsh thermal-cycling environment of industrial welding. The part's avalanche ruggedness adds margin against inductive load transients during arc strikes.
Inirekomenda
Buod ng mga Inirekomendang Produkto
Impormasyon ng Talumpati sa Engineering for IPT015N10NF2SATMA1 — ikabit, gabay sa disenyo, at impormasyon ng pagsunod sa kautusan.
Paunawang Hanapin
Ikabit sa Mga Alternatibo
| Parametro | Ito ang Producto | IPT017N12NM6ATMA1 | IPB021N10NM5LF2ATMA1 | BSC070N10NS5ATMA1 | VBGQT1101 | IPTG025N15NM6ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi | Infineon Technologies |
| Package | PG-HSOF-8-10 | PG-HSOF-8-10 - same | PG-HSOF-8-10 - same | PG-HSOF-8-10 - same | PG-HSOF-8-10 (TOLL) - same | PG-HSOF-8-10 - same |
| Drain-Source Voltage (VDS) | 100 V | 120 V | 100 V | 100 V | 100 V | 150 V |
| Operating Temperature Range | -55 °C to +175 °C | -55 °C to +175 °C (assumed) | -55 °C to +175 °C (assumed) | -55 °C to +175 °C (assumed) | -55 °C to +175 °C (assumed) | -55 °C to +175 °C (assumed) |
Pangunahing mga Pagkakaiba
- Lowest RDS(on) in the 100 V HSOF-8 Infineon family at this generation (kumpara saBSC070N10NS5ATMA1)
- Source-down HSOF-8 footprint with tab as drain (kumpara saIPB021N10NM5LF2ATMA1)
- Domestic Chinese-source drop-in option available (kumpara saVBGQT1101)
Talaan ng Disenyo
Estimated: at 100 A continuous drain current and RDS(on)=1.5 mΩ, the IPT015N10NF2SATMA1 dissipates approximately 15 W conduction loss. With the HSOF-8 source-down package thermal resistance of approximately 0.5 °C/W to the PCB tab, and assuming a 100 mm² copper pour on both sides of a 2 oz PCB, the junction-to-ambient thermal resistance can be lowered to ~20 °C/W. This keeps the 15 W dissipation within a 40 °C junction temperature rise at 25 °C ambient, well below the 175 °C absolute maximum. Designers should compute thermal resistance on their actual board stackup using Infineon's HSOF-8 thermal model rather than relying on the datasheet's reference PCB.
The source-down HSOF-8 package eliminates the traditional source-bond-wire inductance by routing source current directly into the PCB copper plane via the exposed tab. To exploit this benefit, the drain copper island must be sized to handle up to 315 A pulsed with minimal DC voltage drop, and the gate-drive loop must be kept tight to avoid dv/dt-induced ringing. Recommended: place the gate-drive resistor within 5 mm of the gate pin, use a Kelvin-source connection (where the source-sense pin is connected to the gate-driver ground separately from the power source), and use a 4-layer PCB with at least 2 oz copper on the top layer for the drain tab. Avoid vias in the drain tab area where possible to minimize spreading resistance.
Do not use VGS=5 V drive at full rated current: at 5 V VGS the IPT015N10NF2SATMA1 RDS(on) increases to approximately 2.5–3.0 mΩ, doubling conduction loss at 100 A load and pushing the part toward thermal shutdown. Always use a 10 V gate driver (or 8 V minimum for moderate-load conditions). Also avoid single-pulse avalanche operation beyond the rated EAS, which can occur when interrupting inductive loads without a freewheeling path. For transformer-coupled SMPS designs always include a primary-side RCD or TVS clamp to absorb leakage-inductance energy at turn-off. Finally, confirm that the gate-driver's negative drive capability (typically -2 V to -5 V) is sufficient to prevent parasitic turn-on from Miller current in bridge-topology applications.
Impormasyon ng Pagsunod sa Kautusan
RoHS and lead-free per Infineon product page. Standard industrial grade; AEC-Q100 automotive variants use different Infineon part-number suffixes (e.g. IAUZ-series). Halogen-free per the OptiMOS family datasheet.
