IPT015N10NF2SATMA1 vs IPT017N12NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPT015N10NF2SATMA1 sa pamamagitan ng Infineon at IPT017N12NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPT015N10NF2SATMA1 - 100V 315A 1.5mΩ OptiMOS MOSFET | Infineon
IPT015N10NF2SATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPT015N10NF2SATMA1 | IPT017N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-HSOF-8-10 (9-pin, 8+tab) | PG-HSOF-8 (TOLL) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS 6 |
| Gate Drive Voltage (typ) | 10 V | — |
| Energia ng Isang Pagpupuslit ng Pagbubwis | [DATA_NEEDED: EAS value] | — |
| Tindminan RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPT017N12NM6ATMA1 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 331 A |
| On-Resistance RDS(on) max | — | 1.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 395 W |
| Temperature na Operasyon | — | -55C to +175C |
| Bilang ng Pin | — | 8 + tab |
| Packaging | — | Tape & Reel |