BSC190N15NS3GATMA1 vs BSC098N10NS5ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC190N15NS3GATMA1 tarafından Infineon ve BSC098N10NS5ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ AktifInfineon
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | BSC190N15NS3GATMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Technology | OptiMOS 3 (N-Channel) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 150 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) max | 20 V | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V | [DATA_NEEDED: VGS(th) typ/min/max] |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm | — |
| On-Resistance RDS(on) typ at VGS=10V | [DATA_NEEDED: RDS(on) typical at 10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| İşletim Sıcaklığı Aralığı | -55 C to +150 C | [DATA_NEEDED: Tj min/max] |
| Paket | PG-TDSON-8-1 (TDSON-8 EP) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Montaj Türü | Surface Mount | Surface Mount |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | 1 | 1 |
| Continuous Drain Current (ID, Tc=25C) | — | 60 A |
| Continuous Drain Current (ID, Ta) | — | [DATA_NEEDED: ID Ta-rated value] |
| On-Resistance RDS(on) max @ VGS=10V | — | 9.8 mOhm |
| Power Dissipation (Tc=25C) | — | 69 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Diode Continuous Forward Current (IS) | — | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | — | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | — | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | — | 1.1 V (IF=30 A, Tj=25C) |
| Shipping Packaging | — | Tape & Reel (T/R) |