EP1S10F780I6N vs EP1S10F780C6N Karşılaştırma

Ayrıntılı yan yana karşılaştırma EP1S10F780I6N tarafından Intel ve EP1S10F780C6N tarafından IntelAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre EP1S10F780I6N EP1S10F780C6N
Marka Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Yaşam Döngüsü Durumu NRND Obsolete
Family Stratix Stratix
Logic Elements 10,570 —
Logic Array Blocks (LABs) 1,057 —
User I/Os 426 —
Embedded RAM (Total) 920,448 bits —
M512 Blocks 94 (32 x 18 bits each) —
M4K Blocks 60 (128 x 36 bits each) —
M-RAM Blocks 1 (4 Kbit) —
PLLs 6 —
Clock Outputs 16 —
DSP Blocks 12 —
Transceiver Channels 12 (not populated on I6 speed grade) —
Core Voltage (VCCINT) 1.5 V —
I/O Voltage (VCCIO) 1.5 V, 1.8 V, 2.5 V, 3.3 V (per bank) —
Process Technology 0.13 µm CMOS 130 nm CMOS
İşletim Sıcaklığı -40 °C to +100 °C (industrial) 0 C to +85 C (Commercial)
Speed Grade -6 (6.0 ns core clock period) —
Paket 780-ball FineLine BGA, 29 x 29 mm, 1.0 mm pitch FBGA-780 (29 x 29 mm, 1.0 mm pitch)
Montaj Türü Surface Mount Surface Mount
MSL Seviyesi 3 (168 hours) [DATA_NEEDED: MSL rating]
RoHS Durumu [DATA_NEEDED: RoHS compliance status] Non-compliant (LEAD FR finish per AiPCBA datasheet)
Configuration Modes Active Serial (AS), Passive Serial (PS), JTAG —
Logic Family CMOS CMOS
Supply Voltage Nominal 1.5 V —
Logic Elements (LEs) — 10,570
Configurable Logic Blocks (CLBs) — 1,200
Embedded Memory — 920 Kbit (TriMatrix)
Core Supply Voltage — 1.5 V
I/O Supply Voltage — Multi-voltage (3.3 V / 2.5 V / 1.8 V LVTTL/LVCMOS, LVDS)
Maximum Internal Clock Frequency — 450.05 MHz
Pin / Ball Count — 780
User I/O Count — 426 (per FindIC)
Configuration Interface — JTAG (IEEE 1149.1), Passive Serial, Fast Passive Parallel, Passive Parallel Asynchronous
Lead Finish — SnPb (LEAD FR / non-RoHS variant)

Dökümanlar & Kaynaklar

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