EP1S10F780I6N vs EP1S10F780C6N 比較

詳細並排比較 EP1S10F780I6N 由 Intel 與 EP1S10F780C6N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 EP1S10F780I6N EP1S10F780C6N
品牌 Intel Intel
類別 FPGA & CPLD FPGA & CPLD
生命週期狀態 NRND Obsolete
Family Stratix Stratix
Logic Elements 10,570 —
Logic Array Blocks (LABs) 1,057 —
User I/Os 426 —
Embedded RAM (Total) 920,448 bits —
M512 Blocks 94 (32 x 18 bits each) —
M4K Blocks 60 (128 x 36 bits each) —
M-RAM Blocks 1 (4 Kbit) —
PLLs 6 —
Clock Outputs 16 —
DSP Blocks 12 —
Transceiver Channels 12 (not populated on I6 speed grade) —
Core Voltage (VCCINT) 1.5 V —
I/O Voltage (VCCIO) 1.5 V, 1.8 V, 2.5 V, 3.3 V (per bank) —
Process Technology 0.13 µm CMOS 130 nm CMOS
工作溫度 -40 °C to +100 °C (industrial) 0 C to +85 C (Commercial)
Speed Grade -6 (6.0 ns core clock period) —
封裝 780-ball FineLine BGA, 29 x 29 mm, 1.0 mm pitch FBGA-780 (29 x 29 mm, 1.0 mm pitch)
安裝類型 Surface Mount Surface Mount
MSL 等級 3 (168 hours) [DATA_NEEDED: MSL rating]
RoHS 狀態 [DATA_NEEDED: RoHS compliance status] Non-compliant (LEAD FR finish per AiPCBA datasheet)
Configuration Modes Active Serial (AS), Passive Serial (PS), JTAG —
Logic Family CMOS CMOS
Supply Voltage Nominal 1.5 V —
Logic Elements (LEs) — 10,570
Configurable Logic Blocks (CLBs) — 1,200
Embedded Memory — 920 Kbit (TriMatrix)
Core Supply Voltage — 1.5 V
I/O Supply Voltage — Multi-voltage (3.3 V / 2.5 V / 1.8 V LVTTL/LVCMOS, LVDS)
Maximum Internal Clock Frequency — 450.05 MHz
Pin / Ball Count — 780
User I/O Count — 426 (per FindIC)
Configuration Interface — JTAG (IEEE 1149.1), Passive Serial, Fast Passive Parallel, Passive Parallel Asynchronous
Lead Finish — SnPb (LEAD FR / non-RoHS variant)

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