IAUCN04S7L019ATMA1 vs BSC0901NSATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUCN04S7L019ATMA1 tarafından Infineon ve BSC0901NSATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IAUCN04S7L019ATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 120 A | — |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | 1.91 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th) typical/max value] | — |
| Gate Charge (Q<sub>g</sub>) | [DATA_NEEDED: Qg total/nominal value] | — |
| Paket | PG-TDSON-8-33 | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı | -55°C to +175°C (junction) | — |
| Power Dissipation (P<sub>D</sub>) | [DATA_NEEDED: Pd max at 25C] | — |
| Jantten Ortama Termal Direnç | [DATA_NEEDED: RthJA value] | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | 1 | — |
| Packaging | Tape & Reel (13-inch reel) | — |
| Standard Pack Quantity | 5000 pieces | — |
| Ordering Code Suffix | ATMA1 (Tape & Reel 13") | — |
| Part Family | — | OptiMOS 30V |
| Technology | — | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| İşletim Sıcaklığı Aralığı | — | -55C to +150C |
| Nem Hassasiyet Seviyesi (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |