IAUCN04S7N009ATMA1 vs BSC123N08NS3GATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUCN04S7N009ATMA1 tarafından Infineon ve BSC123N08NS3GATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IAUCN04S7N009ATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ | — |
| Gate Drive Voltage (V_GS) | 10 V | — |
| Paket | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı | -55C to +175C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| MSL Seviyesi | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Durumu | Compliant | Compliant with exemption |
| Configuration | Single N-Channel | Single with built-in body diode |
| Supplier Device Package | PG-TDSON-8-34 | — |
| Part Family | — | OptiMOS 3 |
| Channel Type | — | N-Channel |
| Maximum Drain-Source Voltage (VDS) | — | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | — | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | — | 11 A |
| Maximum Pulsed Drain Current | — | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | — | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc) | — | 66 W |
| Power Dissipation (Ta) | — | 2.5 W |
| İşletim Jant Sıcaklığı | — | -55C to +150C |
| Automotive Qualified | — | Yes (AEC-Q101) |