IPB35N10S3L26ATMA1 vs IPD70N10S3L12ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPB35N10S3L26ATMA1 tarafından Infineon ve IPD70N10S3L12ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPB35N10S3L26ATMA1 | IPD70N10S3L12ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T | OptiMOS-T |
| Channel Type | N-Channel | — |
| Maximum Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC | 35 A | — |
| Power Dissipation (PD) at TC | 71 W | — |
| Package Type | PG-TO263-3 (D2PAK-2) | — |
| Montaj Türü | Surface Mount | Surface Mount |
| Pin Sayısı | 3 (Gate, Drain, Source) | 3 (Drain, Gate, Source + tab) |
| Channel Mode | Enhancement | — |
| RDS(on) (typical per Infineon product page) | 26.3 mΩ | — |
| Typical Gate Charge Qg @ Vgs | 80 nC | — |
| Maximum Drain-Source Resistance Rds | 1.7 mΩ (per RS Components listing) | — |
| Minimum Operating Temperature | -55 C | — |
| Maximum Power Dissipation Pd | 81 W (per RS Components listing) | — |
| RoHS Durumu | [DATA_NEEDED: RoHS status] | Compliant (Green Product) |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 qualification status] | — |
| Transistor Türü | — | N-Channel MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 70 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| Power Dissipation (Ptot, Tc) | — | 125 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 11.5 mΩ |
| İşletim Sıcaklığı Aralığı | — | -55 °C to +175 °C (junction) |
| Paket | — | PG-TO252-3-11 (DPAK) |
| MSL Seviyesi | — | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Rating | — | 100 % avalanche tested |
| Avalanche Energy (Single Pulse) | — | [DATA_NEEDED: EAS value] |