IPD135N03LGATMA1 vs IPD060N03LGATMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma IPD135N03LGATMA1 tarafından Infineon ve IPD060N03LGATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Infineon
IPD135N03LGATMA1 IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 ✓ Aktif
Infineon
IPD060N03LGATMA1 IPD060N03LGATMA1 - 30V 50A OptiMOS N-Ch MOSFET | Infineon

IPD060N03LGATMA1 - 30V 50A OptiMOS N-Ch MOSFET | Infineon

IPD060N03LGATMA1 ✓ Aktif

Özellik Karşılaştırması

Parametre IPD135N03LGATMA1 IPD060N03LGATMA1
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ —
Transistor Türü N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) 30 A (Tc) —
Power Dissipation (PD) 31 W (Tc) —
Paket / Kas PG-TO252-3 (DPAK), Surface Mount PG-TO252-3 (DPAK)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Gate Charge (Qg) Ultra-low (per OptiMOS™ family spec) —
Output Charge (Qoss) Ultra-low (per OptiMOS™ family spec) —
İşletim Sıcaklığı Aralığı -55°C to +175°C (TJ max typical for OptiMOS) —
Montaj Türü Surface Mount Surface Mount
MSL Seviyesi 1 (per JEDEC J-STD-020) 1 (Unlimited)
RoHS Durumu Compliant Compliant
Lead-Free Finish Yes —
Qualification Industrial (Infineon OptiMOS™ standard grade) —
Product Family — OptiMOS 30V
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID, TC=25C) — 50 A
Pulsed Drain Current (IDM, TC=25C, tp<=10us) — 200 A
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage (VGS(th), typ) — 1.7 V
On-State Resistance (RDS(on), VGS=10V) — 6.0 mOhm (typ) / 7.5 mOhm (max)
On-State Resistance (RDS(on), VGS=4.5V) — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg, typ) — 21 nC
Output Charge (Qoss, typ) — [DATA_NEEDED: Qoss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
Power Dissipation (PD, TC=25C) — 56 W
İşletim Jant Sıcaklığı — -55C to +175C
Thermal Resistance Junction-to-Case (RthJC, max) — 2.5 C/W
Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) — 62 C/W
Lead-Free / Halogen-Free — Yes / Yes
Packing — Tape & Reel (T/R), 2500 per reel
AEC-Q101 / Automotive Grade — Not qualified
Technology / Generation — OptiMOS 30V, trench MOSFET

Dökümanlar & Kaynaklar

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