IPG20N04S4L07ATMA1 vs IPD50N03S4L06ATMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma IPG20N04S4L07ATMA1 tarafından Infineon ve IPD50N03S4L06ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Infineon
IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 ✓ Aktif

Özellik Karşılaştırması

Parametre IPG20N04S4L07ATMA1 IPD50N03S4L06ATMA1
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS™ T2 —
FET Type 2x N-Channel (Dual, Independent) N-Channel, Enhancement Mode
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) 20 A —
RDS(on) Max @ VGS=10V 7.2 mΩ (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge at VGS=10V] —
Power Dissipation (PD) Max 65 W —
İşletim Jant Sıcaklığı -55°C to +175°C -55 C to +175 C
Paket PG-TDSON-8-4 (TDSON-8-4) PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount
Montaj Türü Surface Mount Surface Mount
Logic-Level Gate Drive Yes (4.5V VGS fully enhanced) —
MSL Seviyesi MSL1 (per JEDEC J-STD-020, 260°C peak reflow) MSL1 (up to 260 C peak reflow)
AEC-Q101 Qualification Qualified —
Avalanche Tested 100% (per datasheet) —
RoHS / Lead-Free RoHS compliant, lead-free terminations —
Drain-Source Voltage (V_DS) — 30 V
Continuous Drain Current (I_D, Tc) — 50 A
On-State Resistance (R_DS(on) max) — 5.5 mOhm at V_GS = 10 V
Gate Threshold Voltage (V_GS(th) typ) — 2.2 V
Total Gate Charge (Q_g) — 31 nC at V_GS = 10 V
Input Capacitance (C_iss) — 2.33 nF
Output Capacitance (C_oss) — 600 pF
Reverse Transfer Capacitance (C_rss) — 34 pF
Power Dissipation (P_D) — 56 W at Tc = 25 C
Automotive Qualification — AEC-Q101
Avalanche Rating — 100% Avalanche Tested
RoHS Durumu — Compliant (Green Package)

Dökümanlar & Kaynaklar

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