IPG20N04S4L07ATMA1 vs IPD50N03S4L06ATMA1 比較
詳細並排比較 IPG20N04S4L07ATMA1 由 Infineon 與 IPD50N03S4L06ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPG20N04S4L07ATMA1 | IPD50N03S4L06ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ T2 | — |
| FET Type | 2x N-Channel (Dual, Independent) | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 20 A | — |
| RDS(on) Max @ VGS=10V | 7.2 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation (PD) Max | 65 W | — |
| 工作接面溫度 | -55°C to +175°C | -55 C to +175 C |
| 封裝 | PG-TDSON-8-4 (TDSON-8-4) | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount |
| 安裝類型 | Surface Mount | Surface Mount |
| Logic-Level Gate Drive | Yes (4.5V VGS fully enhanced) | — |
| MSL 等級 | MSL1 (per JEDEC J-STD-020, 260°C peak reflow) | MSL1 (up to 260 C peak reflow) |
| AEC-Q101 Qualification | Qualified | — |
| Avalanche Tested | 100% (per datasheet) | — |
| RoHS / Lead-Free | RoHS compliant, lead-free terminations | — |
| Drain-Source Voltage (V_DS) | — | 30 V |
| Continuous Drain Current (I_D, Tc) | — | 50 A |
| On-State Resistance (R_DS(on) max) | — | 5.5 mOhm at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th) typ) | — | 2.2 V |
| Total Gate Charge (Q_g) | — | 31 nC at V_GS = 10 V |
| Input Capacitance (C_iss) | — | 2.33 nF |
| Output Capacitance (C_oss) | — | 600 pF |
| Reverse Transfer Capacitance (C_rss) | — | 34 pF |
| Power Dissipation (P_D) | — | 56 W at Tc = 25 C |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS 狀態 | — | Compliant (Green Package) |